inchange semiconductor isc product specification isc silicon npn power transistor MJ8502 description collector-emitter sustaining voltage- : v ceo(sus) = 700v(min) high switching speed applications designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switch-mode applications. typical applications: switching regulators inverters solenoid and relay drivers motor controls deflection circuits absolute maximum ratings(t a =25 ) symbol parameter value unit v cev collector-emitter voltage 1200 v v ceo(sus) collector-emitter voltage 700 v v ebo emitter-base voltage 8 v i c collector current-continuous 5 a i cm collector current-peak 10 a i b b base current-continuous 4 a i bm base current-peak 8 a p c collector power dissipation@t c =25 150 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.16 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJ8502 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 700 v v ce (sat)- 1 collector-emitter saturation voltage i c = 2.5a; i b = 1a i c = 2.5a; i b = 1a,t c =100 2.0 3.0 v v ce (sat)- 2 collector-emitter saturation voltage i c = 5a; i b = 2a b 5.0 v v be (sat) base-emitter saturation voltage i c = 2.5a; i b = 1a i c = 2.5a; i b = 1a,t c =100 1.5 1.5 v i cev collector cutoff current v cev =1200v;v be (off) =1.5v v cev =1200v;v be (off) =1.5v;t c =150 0.25 5.0 ma i cer collector cutoff current v ce = 1200v; r be = 50 ,t c = 100 5.0 ma i ebo emitter cutoff current v eb = 7.0v; i c =0 1.0 ma h fe dc current gain i c = 1.0a ; v ce = 5v 7.5 c ob output capacitance i e = 0; v cb = 10v; f test =1.0khz 60 300 pf switching times;resistive load t d delay time 40 200 ns t r rise time 125 2000 ns t s storage time 1200 4000 ns t f fall time i c = 2.5a , v cc = 500v; i b1 = 1a;t p = 50 s; v be (off) = 5v duty cycle 2.0% 650 2000 ns isc website www.iscsemi.cn 2
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